| Кількість | Ціна |
|---|---|
| 2+ | 295.58 грн |
| 10+ | 160.37 грн |
| 100+ | 120.12 грн |
| 500+ | 106.31 грн |
| 1000+ | 98.03 грн |
| 2500+ | 91.12 грн |
Відгуки про товар
Написати відгук
Технічний опис CSD19535KCS Texas Instruments
Description: MOSFET N-CH 100V 150A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції CSD19535KCS за ціною від 97.60 грн до 305.22 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD19535KCS | Texas Instruments |
 Description: MOSFET N-CH 100V 150A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 4231 шт: термін постачання 21-31 дні (днів) |
|
| CSD19535KCS |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 100V 150A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 150A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4231 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 305.22 грн |
| 50+ | 151.20 грн |
| 100+ | 137.41 грн |
| 500+ | 106.31 грн |
| 1000+ | 99.04 грн |
| 2000+ | 97.60 грн |