CSD19537Q3 Texas Instruments
Виробник: Texas Instruments
Description: MOSFET N-CH 100V 9.7A/50A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 2500+ | 31.73 грн |
| 5000+ | 28.43 грн |
| 7500+ | 27.62 грн |
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Технічний опис CSD19537Q3 Texas Instruments
Description: MOSFET N-CH 100V 9.7A/50A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V, Power Dissipation (Max): 2.8W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-VSON-CLIP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V.
Інші пропозиції CSD19537Q3 за ціною від 28.72 грн до 114.94 грн
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CSD19537Q3 | Texas Instruments |
MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19537Q3T |
на замовлення 3319 шт: термін постачання 21-30 дні (днів) |
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CSD19537Q3 | Texas Instruments |
Description: MOSFET N-CH 100V 9.7A/50A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V Power Dissipation (Max): 2.8W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V |
на замовлення 11894 шт: термін постачання 21-31 дні (днів) |
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| CSD19537Q3 |
|
Виробник: Texas Instruments
MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19537Q3T
MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19537Q3T
на замовлення 3319 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 69.62 грн |
| 100+ | 40.04 грн |
| 500+ | 35.00 грн |
| 1000+ | 32.03 грн |
| 2500+ | 28.72 грн |
| CSD19537Q3 |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 100V 9.7A/50A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
Description: MOSFET N-CH 100V 9.7A/50A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
на замовлення 11894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 114.94 грн |
| 10+ | 70.22 грн |
| 100+ | 47.12 грн |
| 500+ | 34.92 грн |
| 1000+ | 31.92 грн |