CSD19538Q2T Texas Instruments
Виробник: Texas Instruments
Description: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 43.94 грн |
| 500+ | 35.71 грн |
| 750+ | 33.29 грн |
| 1250+ | 29.88 грн |
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Технічний опис CSD19538Q2T Texas Instruments
Description: MOSFET N-CH 100V 13.1A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V.
Інші пропозиції CSD19538Q2T за ціною від 33.07 грн до 136.92 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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CSD19538Q2T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm Kind of channel: enhancement Case: WSON6 Technology: NexFET™ Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 4.3nC Dimensions: 2x2mm On-state resistance: 49mΩ Drain current: 14.4A Gate-source voltage: ±20V Power dissipation: 20.2W Drain-source voltage: 100V |
на замовлення 1182 шт: термін постачання 14-30 дні (днів) |
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CSD19538Q2T | Texas Instruments |
Description: MOSFET N-CH 100V 13.1A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
на замовлення 1635 шт: термін постачання 21-31 дні (днів) |
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CSD19538Q2T | Texas Instruments |
MOSFETs 100V 49mOhm NexFET P ower MOSFET A 595-C A 595-CSD19538Q2 |
на замовлення 28064 шт: термін постачання 21-30 дні (днів) |
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Виробник: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm
Kind of channel: enhancement
Case: WSON6
Technology: NexFET™
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.3nC
Dimensions: 2x2mm
On-state resistance: 49mΩ
Drain current: 14.4A
Gate-source voltage: ±20V
Power dissipation: 20.2W
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm
Kind of channel: enhancement
Case: WSON6
Technology: NexFET™
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.3nC
Dimensions: 2x2mm
On-state resistance: 49mΩ
Drain current: 14.4A
Gate-source voltage: ±20V
Power dissipation: 20.2W
Drain-source voltage: 100V
на замовлення 1182 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.74 грн |
| 11+ | 39.55 грн |
| 25+ | 38.06 грн |
| 100+ | 34.73 грн |
| 250+ | 33.07 грн |
| CSD19538Q2T |
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Виробник: Texas Instruments
Description: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
Description: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
на замовлення 1635 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.43 грн |
| 10+ | 68.06 грн |
| 100+ | 42.31 грн |
| CSD19538Q2T |
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Виробник: Texas Instruments
MOSFETs 100V 49mOhm NexFET P ower MOSFET A 595-C A 595-CSD19538Q2
MOSFETs 100V 49mOhm NexFET P ower MOSFET A 595-C A 595-CSD19538Q2
на замовлення 28064 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.92 грн |
| 10+ | 86.53 грн |
| 100+ | 43.91 грн |
| 500+ | 37.83 грн |
| 1000+ | 34.17 грн |
| 2500+ | 33.27 грн |