CSD22202W15 Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 8V 10A 9DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V
Description: MOSFET P-CH 8V 10A 9DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 17.61 грн |
6000+ | 16.07 грн |
9000+ | 14.88 грн |
30000+ | 13.82 грн |
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Технічний опис CSD22202W15 Texas Instruments
Description: MOSFET P-CH 8V 10A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 9-DSBGA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V.
Інші пропозиції CSD22202W15 за ціною від 15.45 грн до 49.88 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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CSD22202W15 | Виробник : Texas Instruments |
Description: MOSFET P-CH 8V 10A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V |
на замовлення 53208 шт: термін постачання 21-31 дні (днів) |
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CSD22202W15 | Виробник : Texas Instruments | MOSFET P-CH NexFET Pwr MOSFET |
на замовлення 2557 шт: термін постачання 21-30 дні (днів) |
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