CSD22204W Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 8V 5A 9DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.23 грн |
| 6000+ | 13.49 грн |
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Технічний опис CSD22204W Texas Instruments
Description: MOSFET P-CH 8V 5A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 9-DSBGA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V.
Інші пропозиції CSD22204W за ціною від 12.43 грн до 63.68 грн
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CSD22204W | Texas Instruments |
MOSFET -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection 9-DSBGA |
на замовлення 1785 шт: термін постачання 21-30 дні (днів) |
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CSD22204W | Texas Instruments |
Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V |
на замовлення 6769 шт: термін постачання 21-31 дні (днів) |
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| CSD22204W |
|
Виробник: Texas Instruments
MOSFET -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection 9-DSBGA
MOSFET -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection 9-DSBGA
на замовлення 1785 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.73 грн |
| 10+ | 41.28 грн |
| 100+ | 24.99 грн |
| 500+ | 19.54 грн |
| 1000+ | 15.88 грн |
| 3000+ | 13.25 грн |
| 9000+ | 12.43 грн |
| CSD22204W |
|
Виробник: Texas Instruments
Description: MOSFET P-CH 8V 5A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V
Description: MOSFET P-CH 8V 5A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V
на замовлення 6769 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.68 грн |
| 10+ | 37.92 грн |
| 100+ | 24.58 грн |
| 500+ | 17.70 грн |
| 1000+ | 15.97 грн |