CSD22205LT Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET P-CH 8V 7.4A 4PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 4-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V
на замовлення 29750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 45.11 грн |
| 500+ | 37.17 грн |
| 1250+ | 30.28 грн |
| 2500+ | 26.75 грн |
| 6250+ | 25.48 грн |
| 12500+ | 24.3 грн |
Відгуки про товар
Написати відгук
Технічний опис CSD22205LT Texas Instruments
Description: MOSFET P-CH 8V 7.4A 4PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 4-XFLGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: 4-PICOSTAR, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V.
Інші пропозиції CSD22205LT за ціною від 25.97 грн до 71.5 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD22205LT | Виробник : Texas Instruments |
MOSFET -8V, P channel NexFET™ power MOSFET, single LGA 1.2 mm x 1.2 mm, 9.9 mOhm, gate ESD protection 4-PICOSTAR -55 to 150 |
на замовлення 4112 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
CSD22205LT | Виробник : Texas Instruments |
Description: MOSFET P-CH 8V 7.4A 4PICOSTAR Packaging: Cut Tape (CT) Package / Case: 4-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 4-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V |
на замовлення 30205 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| CSD22205LT | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -7.4A; Idm: -71A; 0.6W Mounting: SMD Case: PICOSTAR4 Kind of channel: enhanced Drain-source voltage: -8V Type of transistor: P-MOSFET Gate-source voltage: ±6V Kind of package: reel; tape On-state resistance: 40mΩ Pulsed drain current: -71A Power dissipation: 0.6W Polarisation: unipolar Technology: NexFET™ Drain current: -7.4A кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
| CSD22205LT | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -7.4A; Idm: -71A; 0.6W Mounting: SMD Case: PICOSTAR4 Kind of channel: enhanced Drain-source voltage: -8V Type of transistor: P-MOSFET Gate-source voltage: ±6V Kind of package: reel; tape On-state resistance: 40mΩ Pulsed drain current: -71A Power dissipation: 0.6W Polarisation: unipolar Technology: NexFET™ Drain current: -7.4A |
товар відсутній |