CSD22206WT Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET P-CH 8V 5A 9DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 4 V
на замовлення 14750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 39.59 грн |
| 500+ | 32.62 грн |
| 1250+ | 32.27 грн |
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Технічний опис CSD22206WT Texas Instruments
Description: MOSFET P-CH 8V 5A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: 9-DSBGA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 4 V.
Інші пропозиції CSD22206WT за ціною від 32.71 грн до 97.36 грн
| Фото | Назва | Виробник | Інформація |
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CSD22206WT | Виробник : Texas Instruments |
Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 4 V |
на замовлення 14921 шт: термін постачання 21-31 дні (днів) |
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CSD22206WT | Виробник : Texas Instruments |
MOSFET -8V, P channel NexFET power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection 9-DSBGA -55 to 150 |
на замовлення 497 шт: термін постачання 21-30 дні (днів) |
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CSD22206WT | Виробник : Texas Instruments |
Trans MOSFET P-CH 8V 5A 9-Pin DSBGA T/R |
товар відсутній |
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| CSD22206WT | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -5A; Idm: -108A; 1.7W; DSBGA9 Mounting: SMD Case: DSBGA9 Kind of channel: enhanced Drain-source voltage: -8V Type of transistor: P-MOSFET Gate-source voltage: ±6V Kind of package: reel; tape On-state resistance: 9.1mΩ Pulsed drain current: -108A Power dissipation: 1.7W Polarisation: unipolar Technology: NexFET™ Drain current: -5A кількість в упаковці: 1 шт |
товар відсутній |
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| CSD22206WT | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -5A; Idm: -108A; 1.7W; DSBGA9 Mounting: SMD Case: DSBGA9 Kind of channel: enhanced Drain-source voltage: -8V Type of transistor: P-MOSFET Gate-source voltage: ±6V Kind of package: reel; tape On-state resistance: 9.1mΩ Pulsed drain current: -108A Power dissipation: 1.7W Polarisation: unipolar Technology: NexFET™ Drain current: -5A |
товар відсутній |