CSD23201W10 Texas Instruments

Description: MOSFET P-CH 12V 2.2A 4DSBGA, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): -6V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: 4-DSBGA (1x1), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-UFBGA, DSBGA, Packaging: Tape & Reel (TR).