CSD23203W Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 8V 3A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V
Description: MOSFET P-CH 8V 3A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V
на замовлення 2501 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
9+ | 32.33 грн |
11+ | 26.78 грн |
100+ | 18.63 грн |
500+ | 13.65 грн |
1000+ | 11.09 грн |
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Технічний опис CSD23203W Texas Instruments
Description: MOSFET P-CH 8V 3A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V.
Інші пропозиції CSD23203W за ціною від 8.17 грн до 32.47 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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CSD23203W | Виробник : Texas Instruments | MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA |
на замовлення 7214 шт: термін постачання 21-30 дні (днів) |
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CSD23203W | Виробник : Texas Instruments |
Description: MOSFET P-CH 8V 3A 6DSBGA Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V |
товар відсутній |