CSD23203WT Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 8V 3A 6DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V
Description: MOSFET P-CH 8V 3A 6DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V
на замовлення 38750 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
250+ | 44.65 грн |
500+ | 36.8 грн |
1250+ | 29.97 грн |
2500+ | 26.48 грн |
6250+ | 25.22 грн |
12500+ | 24.06 грн |
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Технічний опис CSD23203WT Texas Instruments
Description: MOSFET P-CH 8V 3A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V.
Інші пропозиції CSD23203WT за ціною від 25.97 грн до 70.77 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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CSD23203WT | Виробник : Texas Instruments | MOSFET CSD23203W 8V P-Ch NexFET Power MOSFET |
на замовлення 1286 шт: термін постачання 21-30 дні (днів) |
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CSD23203WT | Виробник : Texas Instruments |
Description: MOSFET P-CH 8V 3A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V |
на замовлення 39083 шт: термін постачання 21-31 дні (днів) |
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CSD23203WT | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -3A; Idm: -54A; 0.75W; DSBGA6 Kind of package: reel; tape Drain-source voltage: -8V Drain current: -3A On-state resistance: 53mΩ Type of transistor: P-MOSFET Power dissipation: 0.75W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -54A Mounting: SMD Case: DSBGA6 кількість в упаковці: 1 шт |
товар відсутній |
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CSD23203WT | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -3A; Idm: -54A; 0.75W; DSBGA6 Kind of package: reel; tape Drain-source voltage: -8V Drain current: -3A On-state resistance: 53mΩ Type of transistor: P-MOSFET Power dissipation: 0.75W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -54A Mounting: SMD Case: DSBGA6 |
товар відсутній |