CSD23280F3T Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 12V 1.8A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 24.84 грн |
| 500+ | 21.82 грн |
| 750+ | 20.94 грн |
Відгуки про товар
Написати відгук
Технічний опис CSD23280F3T Texas Instruments
Description: MOSFET P-CH 12V 1.8A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 3-PICOSTAR, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V.
Інші пропозиції CSD23280F3T за ціною від 20.92 грн до 92.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CSD23280F3T | Texas Instruments |
Description: MOSFET P-CH 12V 1.8A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V |
на замовлення 12049 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
CSD23280F3T | Texas Instruments |
MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3 |
на замовлення 2916 шт: термін постачання 21-30 дні (днів) |
|
| CSD23280F3T |
|
Виробник: Texas Instruments
Description: MOSFET P-CH 12V 1.8A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V
Description: MOSFET P-CH 12V 1.8A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V
на замовлення 12049 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.11 грн |
| 10+ | 49.21 грн |
| 100+ | 34.08 грн |
| CSD23280F3T |
|
Виробник: Texas Instruments
MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3
MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3
на замовлення 2916 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.62 грн |
| 10+ | 57.48 грн |
| 100+ | 28.65 грн |
| 500+ | 24.37 грн |
| 1000+ | 21.81 грн |
| 2500+ | 20.92 грн |