CSD23381F4T Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET P-CH 12V 2.3A 3PICOSTAR
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 23.28 грн |
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Технічний опис CSD23381F4T Texas Instruments
Description: MOSFET P-CH 12V 2.3A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): -8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V.
Інші пропозиції CSD23381F4T за ціною від 18.29 грн до 60.51 грн
| Фото | Назва | Виробник | Інформація |
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CSD23381F4T | Виробник : Texas Instruments |
Description: MOSFET P-CH 12V 2.3A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V |
на замовлення 13750 шт: термін постачання 21-31 дні (днів) |
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CSD23381F4T | Виробник : Texas Instruments |
MOSFET 12V,P-Ch FemtoFET MOSFET |
на замовлення 1148 шт: термін постачання 21-30 дні (днів) |
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CSD23381F4T | Виробник : Texas Instruments |
Description: MOSFET P-CH 12V 2.3A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V |
на замовлення 14165 шт: термін постачання 21-31 дні (днів) |
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| CSD23381F4T | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.3A; Idm: -9A; 500mW Kind of package: reel; tape Drain-source voltage: -12V Drain current: -2.3A On-state resistance: 0.97Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -9A Mounting: SMD Case: PICOSTAR3 кількість в упаковці: 1 шт |
товар відсутній |
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| CSD23381F4T | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.3A; Idm: -9A; 500mW Kind of package: reel; tape Drain-source voltage: -12V Drain current: -2.3A On-state resistance: 0.97Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -9A Mounting: SMD Case: PICOSTAR3 |
товар відсутній |