CSD25202W15 Texas Instruments
| Кількість | Ціна |
|---|---|
| 6+ | 60.97 грн |
| 10+ | 41.68 грн |
| 100+ | 24.16 грн |
| 500+ | 18.64 грн |
| 1000+ | 16.36 грн |
| 3000+ | 14.43 грн |
| 6000+ | 12.84 грн |
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Технічний опис CSD25202W15 Texas Instruments
Description: MOSFET P-CH 20V 4A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: 9-DSBGA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V.
Інші пропозиції CSD25202W15 за ціною від 17.10 грн до 66.79 грн
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CSD25202W15 | Texas Instruments |
 Description: MOSFET P-CH 20V 4A 9DSBGAPackaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V |
на замовлення 2590 шт: термін постачання 21-31 дні (днів) |
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| CSD25202W15 |
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Виробник: Texas Instruments
Description: MOSFET P-CH 20V 4A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Description: MOSFET P-CH 20V 4A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 66.79 грн |
| 10+ | 40.09 грн |
| 100+ | 26.15 грн |
| 500+ | 18.91 грн |
| 1000+ | 17.10 грн |