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Інші пропозиції CSD25302Q2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| CSD25302Q2 | Texas Instruments |
MOSFET PCH -20V -5A 6SON Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
|
CSD25302Q2 | Texas Instruments |
Description: MOSFET P-CH 20V 5A 6SONPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-SON Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
CSD25302Q2 | Texas Instruments |
Description: MOSFET P-CH 20V 5A 6SONPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-SON Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
CSD25302Q2 | Texas Instruments |
MOSFET PCh NexFET Pwr MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| CSD25302Q2 |
![]() |
Виробник: Texas Instruments
MOSFET PCH -20V -5A 6SON Транзистори
MOSFET PCH -20V -5A 6SON Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| CSD25302Q2 |
![]() |
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 5A 6SON
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-SON
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Description: MOSFET P-CH 20V 5A 6SON
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-SON
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| CSD25302Q2 |
![]() |
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 5A 6SON
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-SON
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Description: MOSFET P-CH 20V 5A 6SON
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-SON
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| CSD25302Q2 |
![]() |
Виробник: Texas Instruments
MOSFET PCh NexFET Pwr MOSFET
MOSFET PCh NexFET Pwr MOSFET
товару немає в наявності
В кошику
од. на суму грн.




