CSD25480F3 Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.03 грн |
| 6000+ | 4.37 грн |
| 9000+ | 4.12 грн |
| 15000+ | 3.61 грн |
| 21000+ | 3.46 грн |
| 30000+ | 3.31 грн |
Відгуки про товар
Написати відгук
Технічний опис CSD25480F3 Texas Instruments
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFLGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): -12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V.
Інші пропозиції CSD25480F3 за ціною від 3.31 грн до 24.08 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD25480F3 | Texas Instruments |
MOSFETs -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
на замовлення 14341 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
CSD25480F3 | Texas Instruments |
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V |
на замовлення 51382 шт: термін постачання 21-31 дні (днів) |
|
| CSD25480F3 |
|
Виробник: Texas Instruments
MOSFETs -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
MOSFETs -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
на замовлення 14341 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 19.89 грн |
| 24+ | 13.42 грн |
| 100+ | 6.01 грн |
| 1000+ | 5.38 грн |
| 3000+ | 4.21 грн |
| 9000+ | 3.59 грн |
| 24000+ | 3.31 грн |
| CSD25480F3 |
|
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
на замовлення 51382 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.08 грн |
| 22+ | 14.06 грн |
| 100+ | 8.81 грн |
| 500+ | 6.12 грн |
| 1000+ | 5.43 грн |