CSD25480F3T Texas Instruments
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.45 грн |
| 250+ | 21.26 грн |
| 2500+ | 21.19 грн |
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Технічний опис CSD25480F3T Texas Instruments
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR, Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): -12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Part Status: Active, Supplier Device Package: 3-PICOSTAR, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V.
Інші пропозиції CSD25480F3T за ціною від 22.94 грн до 96.30 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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CSD25480F3T | Texas Instruments |
 Description: MOSFET P-CH 20V 1.7A 3PICOSTARGate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Part Status: Active Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V |
на замовлення 8250 шт: термін постачання 21-31 дні (днів) |
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CSD25480F3T | Texas Instruments |
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Part Status: Active Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
на замовлення 8416 шт: термін постачання 21-31 дні (днів) |
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| CSD25480F3T |
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Виробник: Texas Instruments
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
на замовлення 8250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 34.65 грн |
| 500+ | 30.12 грн |
| 750+ | 28.47 грн |
| 1250+ | 24.98 грн |
| 1750+ | 23.94 грн |
| 2500+ | 22.94 грн |
| CSD25480F3T |
|
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
на замовлення 8416 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.30 грн |
| 10+ | 58.33 грн |
| 100+ | 38.60 грн |