CSD25484F4T Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 2.5A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 500mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 250+ | 27.76 грн |
| 500+ | 24.41 грн |
| 750+ | 23.80 грн |
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Технічний опис CSD25484F4T Texas Instruments
Description: MOSFET P-CH 20V 2.5A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 94mOhm @ 500mA, 8V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): -12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V.
Інші пропозиції CSD25484F4T за ціною від 20.68 грн до 106.94 грн
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CSD25484F4T | Виробник : Texas Instruments |
MOSFETs 20V P-Ch FemtoFET MO SFET A 595-CSD25484 A 595-CSD25484F4 |
на замовлення 2966 шт: термін постачання 21-30 дні (днів) |
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CSD25484F4T | Виробник : Texas Instruments |
Description: MOSFET P-CH 20V 2.5A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 94mOhm @ 500mA, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
на замовлення 14685 шт: термін постачання 21-31 дні (днів) |
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| CSD25484F4T | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -22A; 500mW Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Technology: NexFET™ Type of transistor: P-MOSFET Case: PICOSTAR3 Gate-source voltage: ±12V Pulsed drain current: -22A Drain-source voltage: -20V Drain current: -2.5A Power dissipation: 0.5W On-state resistance: 825mΩ Polarisation: unipolar |
товару немає в наявності |