CSD25485F5 Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 3.2A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.58 грн |
| 6000+ | 8.42 грн |
| 9000+ | 8.01 грн |
| 15000+ | 7.09 грн |
| 21000+ | 6.83 грн |
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Технічний опис CSD25485F5 Texas Instruments
Description: MOSFET P-CH 20V 3.2A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 3-PICOSTAR, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): -12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V.
Інші пропозиції CSD25485F5 за ціною від 6.77 грн до 41.94 грн
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CSD25485F5 | Texas Instruments |
MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
на замовлення 5599 шт: термін постачання 21-30 дні (днів) |
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CSD25485F5 | Texas Instruments |
Description: MOSFET P-CH 20V 3.2A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V |
на замовлення 26401 шт: термін постачання 21-31 дні (днів) |
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| CSD25485F5 |
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Виробник: Texas Instruments
MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
на замовлення 5599 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.69 грн |
| 12+ | 27.15 грн |
| 100+ | 13.74 грн |
| 1000+ | 8.97 грн |
| 3000+ | 8.01 грн |
| 9000+ | 7.11 грн |
| 24000+ | 6.77 грн |
| CSD25485F5 |
|
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 3.2A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
Description: MOSFET P-CH 20V 3.2A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
на замовлення 26401 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.94 грн |
| 13+ | 24.90 грн |
| 100+ | 15.96 грн |
| 500+ | 11.33 грн |
| 1000+ | 10.15 грн |