CSD25485F5T Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 5.3A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 250+ | 29.83 грн |
| 500+ | 26.17 грн |
| 750+ | 26.03 грн |
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Технічний опис CSD25485F5T Texas Instruments
Description: MOSFET P-CH 20V 5.3A 3PICOSTAR, Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): -12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Supplier Device Package: 3-PICOSTAR, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Інші пропозиції CSD25485F5T за ціною від 24.51 грн до 83.88 грн
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CSD25485F5T | Texas Instruments |
MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
на замовлення 469 шт: термін постачання 21-30 дні (днів) |
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CSD25485F5T | Texas Instruments |
Description: MOSFET P-CH 20V 5.3A 3PICOSTAR Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
на замовлення 2217 шт: термін постачання 21-31 дні (днів) |
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| CSD25485F5T |
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Виробник: Texas Instruments
MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
на замовлення 469 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 72.65 грн |
| 10+ | 58.51 грн |
| 100+ | 39.28 грн |
| 500+ | 33.55 грн |
| 1000+ | 27.34 грн |
| 2500+ | 25.75 грн |
| 5000+ | 24.51 грн |
| CSD25485F5T |
|
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 5.3A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 5.3A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
на замовлення 2217 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 83.88 грн |
| 10+ | 59.01 грн |
| 100+ | 29.27 грн |