CSD25501F3T Texas Instruments
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 3.6A 3LGA
Packaging: Tape & Reel (TR)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 3-LGA (0.73x0.64)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 35.82 грн |
| 500+ | 31.17 грн |
| 750+ | 29.47 грн |
| 1250+ | 25.87 грн |
| 1750+ | 24.81 грн |
| 2500+ | 23.78 грн |
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Технічний опис CSD25501F3T Texas Instruments
Description: MOSFET P-CH 20V 3.6A 3LGA, Packaging: Tape & Reel (TR), Package / Case: 3-XFLGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: 3-LGA (0.73x0.64), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): -20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V.
Інші пропозиції CSD25501F3T за ціною від 21.61 грн до 98.63 грн
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CSD25501F3T | Texas Instruments |
MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
на замовлення 793 шт: термін постачання 21-30 дні (днів) |
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CSD25501F3T | Texas Instruments |
Description: MOSFET P-CH 20V 3.6A 3LGA Packaging: Cut Tape (CT) Package / Case: 3-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 3-LGA (0.73x0.64) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V |
на замовлення 11675 шт: термін постачання 21-31 дні (днів) |
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| CSD25501F3T |
|
Виробник: Texas Instruments
MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
на замовлення 793 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.39 грн |
| 10+ | 47.47 грн |
| 100+ | 32.58 грн |
| 500+ | 29.62 грн |
| 1000+ | 24.16 грн |
| 2500+ | 22.71 грн |
| 5000+ | 21.61 грн |
| CSD25501F3T |
|
Виробник: Texas Instruments
Description: MOSFET P-CH 20V 3.6A 3LGA
Packaging: Cut Tape (CT)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 3-LGA (0.73x0.64)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V
Description: MOSFET P-CH 20V 3.6A 3LGA
Packaging: Cut Tape (CT)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 3-LGA (0.73x0.64)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V
на замовлення 11675 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.63 грн |
| 10+ | 60.13 грн |
| 100+ | 39.87 грн |