| Кількість | Ціна |
|---|---|
| 5+ | 68.54 грн |
| 10+ | 42.16 грн |
| 100+ | 23.95 грн |
| 500+ | 18.43 грн |
| 1000+ | 16.71 грн |
| 3000+ | 14.43 грн |
| 6000+ | 12.91 грн |
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Технічний опис CSD75207W15 Texas Instruments
Description: MOSFET 2P-CH 3.9A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Current - Continuous Drain (Id) @ 25°C: 3.9A, Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V, Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V, Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 9-DSBGA, Part Status: Active.
Інші пропозиції CSD75207W15 за ціною від 19.20 грн до 74.56 грн
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CSD75207W15 | Texas Instruments |
 Description: MOSFET 2P-CH 3.9A 9DSBGAPackaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Current - Continuous Drain (Id) @ 25°C: 3.9A Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active |
на замовлення 1016 шт: термін постачання 21-31 дні (днів) |
|
| CSD75207W15 |
|
Виробник: Texas Instruments
Description: MOSFET 2P-CH 3.9A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Description: MOSFET 2P-CH 3.9A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
на замовлення 1016 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 74.56 грн |
| 10+ | 44.80 грн |
| 100+ | 29.29 грн |
| 500+ | 21.22 грн |
| 1000+ | 19.20 грн |