CSD75301W1015 TEXAS INSTRUMENTS
Виробник: TEXAS INSTRUMENTSDescription: TEXAS INSTRUMENTS - CSD75301W1015 - Dual-MOSFET, p-Kanal, 20 V, 1.2 A
tariffCode: 85412900
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.2A
Dauer-Drainstrom Id, p-Kanal: 1.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: -
Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm
Verlustleistung, p-Kanal: 800mW
euEccn: NLR
Bauform - Transistor: DSBGA
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: -
productTraceability: No
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: -
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (10-Jun-2022)
на замовлення 915 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 20.82 грн |
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Технічний опис CSD75301W1015 TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD75301W1015 - Dual-MOSFET, p-Kanal, 20 V, 1.2 A, tariffCode: 85412900, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 1.2A, Dauer-Drainstrom Id, p-Kanal: 1.2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: -, Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm, Verlustleistung, p-Kanal: 800mW, euEccn: NLR, Bauform - Transistor: DSBGA, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: -, productTraceability: No, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: -, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (10-Jun-2022).
Інші пропозиції CSD75301W1015 за ціною від 23.11 грн до 23.11 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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CSD75301W1015 | Виробник : Texas Instruments |
Description: MOSFET 2P-CH 20V 1.2A 6DSBGA Packaging: Bulk Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Obsolete |
на замовлення 1375 шт: термін постачання 21-31 дні (днів) |
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CSD75301W1015 | Виробник : Texas Instruments |
Trans MOSFET P-CH 20V 1.2A 6-Pin DSBGA T/R |
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CSD75301W1015 | Виробник : Texas Instruments |
Description: MOSFET 2P-CH 20V 1.2A 6DSBGA Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Obsolete |
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CSD75301W1015 | Виробник : Texas Instruments |
Description: MOSFET 2P-CH 20V 1.2A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Obsolete |
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CSD75301W1015 | Виробник : Texas Instruments |
MOSFET P-Ch-Dual Common Source Pwr MOSFETs |
товар відсутній |