CSD83325L Texas Instruments
Виробник: Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Bulk
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
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Технічний опис CSD83325L Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 12V, Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-PicoStar, Part Status: Active.
Інші пропозиції CSD83325L за ціною від 18.88 грн до 67.40 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CSD83325L | Texas Instruments |
Description: MOSFET 2N-CH 12V 6PICOSTARPackaging: Cut Tape (CT) Package / Case: 6-XFBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-PicoStar Part Status: Active |
на замовлення 2716 шт: термін постачання 21-31 дні (днів) |
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CSD83325L | Texas Instruments |
MOSFETs 12-V N channel NexF ET power MOSFET dua A 595-CSD83325LT |
на замовлення 4480 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
|
CSD83325L | Texas Instruments |
Description: MOSFET 2N-CH 12V 6PICOSTARPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-PicoStar Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| CSD83325L |
![]() |
Виробник: Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
на замовлення 2716 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.40 грн |
| 10+ | 40.32 грн |
| 50+ | 29.67 грн |
| 100+ | 24.59 грн |
| 500+ | 18.88 грн |
| CSD83325L |
![]() |
Виробник: Texas Instruments
MOSFETs 12-V N channel NexF ET power MOSFET dua A 595-CSD83325LT
MOSFETs 12-V N channel NexF ET power MOSFET dua A 595-CSD83325LT
на замовлення 4480 шт:
термін постачання 21-30 дні (днів)
| CSD83325L |
![]() |
Виробник: Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)



