CSD85301Q2T Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET 2N-CH 20V 5A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 50.13 грн |
| 500+ | 41.31 грн |
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Технічний опис CSD85301Q2T Texas Instruments
Description: MOSFET 2N-CH 20V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V, Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active.
Інші пропозиції CSD85301Q2T за ціною від 28.74 грн до 85.61 грн
| Фото | Назва | Виробник | Інформація |
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CSD85301Q2T | Виробник : Texas Instruments |
Description: MOSFET 2N-CH 20V 5A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active |
на замовлення 1142 шт: термін постачання 21-31 дні (днів) |
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CSD85301Q2T | Виробник : Texas Instruments |
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на замовлення 893 шт: термін постачання 21-30 дні (днів) |
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CSD85301Q2T | Виробник : Texas Instruments |
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CSD85301Q2T | Виробник : Texas Instruments |
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CSD85301Q2T | Виробник : Texas Instruments |
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товар відсутній |
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CSD85301Q2T | Виробник : Texas Instruments |
Power MOSFET 6-Pin WSON EP T/R |
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| CSD85301Q2T | Виробник : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 26A; 2.3W; WSON6 Application: automotive industry Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 26A Case: WSON6 Drain-source voltage: 20V Drain current: 5A On-state resistance: 99mΩ Type of transistor: N-MOSFET x2 кількість в упаковці: 1 шт |
товар відсутній |
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| CSD85301Q2T | Виробник : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 26A; 2.3W; WSON6 Application: automotive industry Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 26A Case: WSON6 Drain-source voltage: 20V Drain current: 5A On-state resistance: 99mΩ Type of transistor: N-MOSFET x2 |
товар відсутній |