CSD85302LT Texas Instruments
Виробник: Texas Instruments
Description: MOSFET 2N-CH 4PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Supplier Device Package: 4-Picostar (1.31x1.31)
Part Status: Active
Description: MOSFET 2N-CH 4PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Supplier Device Package: 4-Picostar (1.31x1.31)
Part Status: Active
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
250+ | 46.85 грн |
500+ | 38.61 грн |
1250+ | 31.45 грн |
2500+ | 27.78 грн |
Відгуки про товар
Написати відгук
Технічний опис CSD85302LT Texas Instruments
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4, Type of transistor: N-MOSFET x2, Technology: NexFET™, Polarisation: unipolar, Drain-source voltage: 20V, Power dissipation: 1.7W, Case: PICOSTAR4, Gate-source voltage: ±10V, On-state resistance: 36mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Semiconductor structure: common drain, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції CSD85302LT за ціною від 45.55 грн до 74.31 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CSD85302LT | Виробник : Texas Instruments |
Description: MOSFET 2N-CH 4PICOSTAR Packaging: Cut Tape (CT) Package / Case: 4-XFLGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Supplier Device Package: 4-Picostar (1.31x1.31) Part Status: Active |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
CSD85302LT | Виробник : Texas Instruments | 20V, N ch NexFET MOSFET dual common source SON3x3, 14mOhm |
товар відсутній |
||||||||||
CSD85302LT | Виробник : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4 Type of transistor: N-MOSFET x2 Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.7W Case: PICOSTAR4 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
||||||||||
CSD85302LT | Виробник : Texas Instruments | MOSFET 20V Dual N ch MOSFET |
товар відсутній |
||||||||||
CSD85302LT | Виробник : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.7W; PICOSTAR4 Type of transistor: N-MOSFET x2 Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.7W Case: PICOSTAR4 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
товар відсутній |