CSD86311W1723 Texas Instruments

Description: MOSFET 2N-CH 25V 4.5A 12DSBGA, Packaging: Tape & Reel (TR), Package / Case: 12-UFBGA, DSBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V, Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 12-DSBGA.