CSD86336Q3DT TEXAS INSTRUMENTS
Виробник: TEXAS INSTRUMENTSDescription: TEXAS INSTRUMENTS - CSD86336Q3DT - Dual-MOSFET, n-Kanal, 25 V, 25 V
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 25V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: -
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 6W
Drain-Source-Spannung Vds, n-Kanal: 25V
euEccn: NLR
Bauform - Transistor: VSON
Anzahl der Pins: 8Pin(s)
Produktpalette: NexFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: -
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 6W
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (27-Jun-2018)
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 48.83 грн |
| 500+ | 45.26 грн |
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Технічний опис CSD86336Q3DT TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD86336Q3DT - Dual-MOSFET, n-Kanal, 25 V, 25 V, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 25V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: -, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 6W, Drain-Source-Spannung Vds, n-Kanal: 25V, euEccn: NLR, Bauform - Transistor: VSON, Anzahl der Pins: 8Pin(s), Produktpalette: NexFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: -, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 6W, Betriebstemperatur, max.: 125°C, SVHC: No SVHC (27-Jun-2018).
Інші пропозиції CSD86336Q3DT за ціною від 45.26 грн до 85.33 грн
| Фото | Назва | Виробник | Інформація |
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CSD86336Q3DT | Виробник : Texas Instruments |
Description: MOSFET 2N-CH 25V 20A 8VSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 125°C Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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CSD86336Q3DT | Виробник : TEXAS INSTRUMENTS |
Description: TEXAS INSTRUMENTS - CSD86336Q3DT - Dual-MOSFET, n-Kanal, 25 V, 25 V tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 25V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: - Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 6W Drain-Source-Spannung Vds, n-Kanal: 25V euEccn: NLR Bauform - Transistor: VSON Anzahl der Pins: 8Pin(s) Produktpalette: NexFET Series Drain-Source-Durchgangswiderstand, n-Kanal: - productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 6W Betriebstemperatur, max.: 125°C SVHC: No SVHC (27-Jun-2018) |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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CSD86336Q3DT | Виробник : Texas Instruments |
Description: MOSFET 2N-CH 25V 20A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 125°C Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CSD86336Q3DT | Виробник : Texas Instruments |
Description: MOSFET 2N-CH 25V 20A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 125°C Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
товару немає в наявності |
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CSD86336Q3DT | Виробник : Texas Instruments |
MOSFET 25-V, N channel synchronous buck NexFET™ power MOSFET, SON 3 mm x 3 mm power block, 20 A 8-VSON-CLIP -55 to 150 |
товару немає в наявності |