CSD86350Q5D Texas Instruments
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 259.34 грн |
| 10+ | 167.51 грн |
| 100+ | 102.17 грн |
| 500+ | 90.43 грн |
| 1000+ | 86.98 грн |
| 2500+ | 84.22 грн |
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Технічний опис CSD86350Q5D Texas Instruments
Description: MOSFET 2N-CH 25V 40A 8LSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 13W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 8V, Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-LSON (5x6), Part Status: Active.
Інші пропозиції CSD86350Q5D за ціною від 90.35 грн до 264.06 грн
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CSD86350Q5D | Texas Instruments |
 Description: MOSFET 2N-CH 25V 40A 8LSONPackaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 13W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 8V Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-LSON (5x6) Part Status: Active |
на замовлення 539 шт: термін постачання 21-31 дні (днів) |
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| CSD86350Q5D |
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на замовлення 1080 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| CSD86350Q5D |
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Виробник: Texas Instruments
Description: MOSFET 2N-CH 25V 40A 8LSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 8V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-LSON (5x6)
Part Status: Active
Description: MOSFET 2N-CH 25V 40A 8LSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 8V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-LSON (5x6)
Part Status: Active
на замовлення 539 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.06 грн |
| 10+ | 166.63 грн |
| 100+ | 116.67 грн |
| 500+ | 90.35 грн |