CSD86350Q5DT Texas Instruments
Виробник: Texas Instruments
Description: MOSFET 2N-CH 25V 40A 8LSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA
Supplier Device Package: 8-LSON (5x6)
Part Status: Active
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Технічний опис CSD86350Q5DT Texas Instruments
Description: MOSFET 2N-CH 25V 40A 8LSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 13W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V, Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V, Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA, Supplier Device Package: 8-LSON (5x6), Part Status: Active.
Інші пропозиції CSD86350Q5DT за ціною від 98.72 грн до 318.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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CSD86350Q5DT | Texas Instruments |
MOSFETs 25-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm power block, 40 A 8-LSON-CLIP -55 to 150 |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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CSD86350Q5DT | Texas Instruments |
Description: MOSFET 2N-CH 25V 40A 8LSONPart Status: Active Supplier Device Package: 8-LSON (5x6) Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drain to Source Voltage (Vdss): 25V Power - Max: 13W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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| CSD86350Q5DT |
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Виробник: Texas Instruments
MOSFETs 25-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm power block, 40 A 8-LSON-CLIP -55 to 150
MOSFETs 25-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm power block, 40 A 8-LSON-CLIP -55 to 150
на замовлення 166 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.55 грн |
| 10+ | 194.50 грн |
| 25+ | 168.44 грн |
| 100+ | 121.50 грн |
| 250+ | 103.55 грн |
| 500+ | 98.72 грн |
| CSD86350Q5DT |
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Виробник: Texas Instruments
Description: MOSFET 2N-CH 25V 40A 8LSON
Part Status: Active
Supplier Device Package: 8-LSON (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drain to Source Voltage (Vdss): 25V
Power - Max: 13W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 40A 8LSON
Part Status: Active
Supplier Device Package: 8-LSON (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drain to Source Voltage (Vdss): 25V
Power - Max: 13W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 318.42 грн |
| 10+ | 203.12 грн |
| 100+ | 144.32 грн |



