CSD86360Q5D Texas Instruments
Виробник: Texas Instruments
Description: MOSFET 2N-CH 25V 50A 8LSON
Part Status: Active
Supplier Device Package: 8-LSON (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5
Current - Continuous Drain (Id) @ 25°C: 50A
Drain to Source Voltage (Vdss): 25V
Power - Max: 13W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 76.36 грн |
| 5000+ | 71.99 грн |
| 7500+ | 71.22 грн |
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Технічний опис CSD86360Q5D Texas Instruments
Description: MOSFET 2N-CH 25V 50A 8LSON, Part Status: Active, Supplier Device Package: 8-LSON (5x6), Vgs(th) (Max) @ Id: 2.1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5, Current - Continuous Drain (Id) @ 25°C: 50A, Drain to Source Voltage (Vdss): 25V, Power - Max: 13W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).
Інші пропозиції CSD86360Q5D за ціною від 70.23 грн до 148.59 грн
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CSD86360Q5D | Texas Instruments |
Description: MOSFET 2N-CH 25V 50A 8LSON Part Status: Active Supplier Device Package: 8-LSON (5x6) Vgs(th) (Max) @ Id: 2.1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5 Current - Continuous Drain (Id) @ 25°C: 50A Drain to Source Voltage (Vdss): 25V Power - Max: 13W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) |
на замовлення 11776 шт: термін постачання 21-31 дні (днів) |
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CSD86360Q5D | Texas Instruments |
MOSFETs Synchrnus Buck NxFT Pwr Block |
на замовлення 1946 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| CSD86360Q5D |
|
Виробник: Texas Instruments
Description: MOSFET 2N-CH 25V 50A 8LSON
Part Status: Active
Supplier Device Package: 8-LSON (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5
Current - Continuous Drain (Id) @ 25°C: 50A
Drain to Source Voltage (Vdss): 25V
Power - Max: 13W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 50A 8LSON
Part Status: Active
Supplier Device Package: 8-LSON (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5
Current - Continuous Drain (Id) @ 25°C: 50A
Drain to Source Voltage (Vdss): 25V
Power - Max: 13W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
на замовлення 11776 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.59 грн |
| 10+ | 105.81 грн |
| 25+ | 96.52 грн |
| 100+ | 81.00 грн |
| 250+ | 76.43 грн |
| 500+ | 73.67 грн |
| 1000+ | 70.23 грн |
| CSD86360Q5D |
|
Виробник: Texas Instruments
MOSFETs Synchrnus Buck NxFT Pwr Block
MOSFETs Synchrnus Buck NxFT Pwr Block
на замовлення 1946 шт:
термін постачання 21-30 дні (днів)