CSD87333Q3D Texas Instruments
Виробник: Texas Instruments
Description: MOSFET 2N-CH 30V 15A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: 125°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
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Технічний опис CSD87333Q3D Texas Instruments
Description: TEXAS INSTRUMENTS - CSD87333Q3D - Dual-MOSFET, n-Kanal, 30 V, 30 V, 15 A, 15 A, 0.0119 ohm, tariffCode: 85412100, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 15A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 15A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0119ohm, Verlustleistung, p-Kanal: 6W, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: No SVHC (27-Jun-2018), Bauform - Transistor: SON, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0119ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 6W, Betriebstemperatur, max.: 150°C.
Інші пропозиції CSD87333Q3D за ціною від 28.51 грн до 78.28 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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CSD87333Q3D | TEXAS INSTRUMENTS |
Description: TEXAS INSTRUMENTS - CSD87333Q3D - Dual-MOSFET, n-Kanal, 30 V, 30 V, 15 A, 15 A, 0.0119 ohmtariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 15A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0119ohm Verlustleistung, p-Kanal: 6W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (27-Jun-2018) Bauform - Transistor: SON Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0119ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 6W Betriebstemperatur, max.: 150°C |
на замовлення 917 шт: термін постачання 21-31 дні (днів) |
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CSD87333Q3D | Texas Instruments |
Description: MOSFET 2N-CH 30V 15A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: 125°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
на замовлення 3220 шт: термін постачання 21-31 дні (днів) |
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CSD87333Q3D | TEXAS INSTRUMENTS |
Description: TEXAS INSTRUMENTS - CSD87333Q3D - Dual-MOSFET, n-Kanal, 30 V, 30 V, 15 A, 15 A, 0.0119 ohmtariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 15A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0119ohm Verlustleistung, p-Kanal: 6W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (27-Jun-2018) Bauform - Transistor: SON Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0119ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 6W Betriebstemperatur, max.: 150°C |
на замовлення 917 шт: термін постачання 21-31 дні (днів) |
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CSD87333Q3D | Texas Instruments |
MOSFETs High Duty Cycle Sync Buck NexFET A 595-C A 595-CSD87333Q3DT |
на замовлення 4031 шт: термін постачання 21-30 дні (днів) |
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| CSD87333Q3D |
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Виробник: TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD87333Q3D - Dual-MOSFET, n-Kanal, 30 V, 30 V, 15 A, 15 A, 0.0119 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 15A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0119ohm
Verlustleistung, p-Kanal: 6W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (27-Jun-2018)
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0119ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 6W
Betriebstemperatur, max.: 150°C
Description: TEXAS INSTRUMENTS - CSD87333Q3D - Dual-MOSFET, n-Kanal, 30 V, 30 V, 15 A, 15 A, 0.0119 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 15A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0119ohm
Verlustleistung, p-Kanal: 6W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (27-Jun-2018)
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0119ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 6W
Betriebstemperatur, max.: 150°C
на замовлення 917 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 43.17 грн |
| 500+ | 33.06 грн |
| CSD87333Q3D |
![]() |
Виробник: Texas Instruments
Description: MOSFET 2N-CH 30V 15A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: 125°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
Description: MOSFET 2N-CH 30V 15A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: 125°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
на замовлення 3220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 74.56 грн |
| 10+ | 51.83 грн |
| 25+ | 46.82 грн |
| 100+ | 38.77 грн |
| 250+ | 36.31 грн |
| 500+ | 34.82 грн |
| 1000+ | 33.45 грн |
| CSD87333Q3D |
![]() |
Виробник: TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD87333Q3D - Dual-MOSFET, n-Kanal, 30 V, 30 V, 15 A, 15 A, 0.0119 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 15A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0119ohm
Verlustleistung, p-Kanal: 6W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (27-Jun-2018)
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0119ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 6W
Betriebstemperatur, max.: 150°C
Description: TEXAS INSTRUMENTS - CSD87333Q3D - Dual-MOSFET, n-Kanal, 30 V, 30 V, 15 A, 15 A, 0.0119 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 15A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0119ohm
Verlustleistung, p-Kanal: 6W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (27-Jun-2018)
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0119ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 6W
Betriebstemperatur, max.: 150°C
на замовлення 917 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 76.19 грн |
| 16+ | 50.82 грн |
| 100+ | 43.17 грн |
| 500+ | 33.06 грн |
| CSD87333Q3D |
![]() |
Виробник: Texas Instruments
MOSFETs High Duty Cycle Sync Buck NexFET A 595-C A 595-CSD87333Q3DT
MOSFETs High Duty Cycle Sync Buck NexFET A 595-C A 595-CSD87333Q3DT
на замовлення 4031 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 78.28 грн |
| 10+ | 50.25 грн |
| 100+ | 36.10 грн |
| 500+ | 34.66 грн |
| 1000+ | 31.96 грн |
| 2500+ | 29.48 грн |
| 10000+ | 28.51 грн |




