CSD87334Q3D Texas Instruments
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.19 грн |
| 10+ | 53.11 грн |
| 100+ | 37.69 грн |
| 500+ | 33.14 грн |
| 1000+ | 30.86 грн |
| 2500+ | 27.48 грн |
| 5000+ | 26.51 грн |
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Технічний опис CSD87334Q3D Texas Instruments
Description: MOSFET 2N-CH 30V 20A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V, Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V, Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3).
Інші пропозиції CSD87334Q3D
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
CSD87334Q3D | Texas Instruments |
Description: MOSFET 2N-CH 30V 20A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
CSD87334Q3D | Texas Instruments |
Description: MOSFET 2N-CH 30V 20A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) |
товару немає в наявності |
В кошику од. на суму грн. |
| CSD87334Q3D |
![]() |
Виробник: Texas Instruments
Description: MOSFET 2N-CH 30V 20A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Description: MOSFET 2N-CH 30V 20A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CSD87334Q3D |
![]() |
Виробник: Texas Instruments
Description: MOSFET 2N-CH 30V 20A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Description: MOSFET 2N-CH 30V 20A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
товару немає в наявності
В кошику
од. на суму грн.




