CSD87335Q3DT Texas Instruments
Виробник: Texas Instruments
Description: MOSFET 2N-CH 30V 25A 8LSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-LSON (3.3x3.3)
Part Status: Active
Description: MOSFET 2N-CH 30V 25A 8LSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-LSON (3.3x3.3)
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
250+ | 91.68 грн |
500+ | 77.24 грн |
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Технічний опис CSD87335Q3DT Texas Instruments
Description: MOSFET 2N-CH 30V 25A 8LSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-LSON (3.3x3.3), Part Status: Active.
Інші пропозиції CSD87335Q3DT за ціною від 54.93 грн до 147.24 грн
Фото | Назва | Виробник | Інформація |
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CSD87335Q3DT | Виробник : Texas Instruments |
Description: MOSFET 2N-CH 30V 25A 8LSON Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-LSON (3.3x3.3) Part Status: Active |
на замовлення 1232 шт: термін постачання 21-31 дні (днів) |
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CSD87335Q3DT | Виробник : Texas Instruments | MOSFET 30-V, N channel synchronous buck NexFET power MOSFET, SON 3 mm x 3 mm power block, 25 A 8-LSON-CLIP -55 to 150 |
на замовлення 8140 шт: термін постачання 21-30 дні (днів) |
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CSD87335Q3DT | Виробник : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 25A; 1.5W; LSON-CLIP8 Technology: NexFET™ Case: LSON-CLIP8 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Dimensions: 3.3x3.3mm Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 5.7/10.7nC Type of transistor: N-MOSFET x2 Kind of channel: enhanced Gate-source voltage: ±10V Drain current: 25A Polarisation: unipolar Drain-source voltage: 30V кількість в упаковці: 1 шт |
товар відсутній |
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CSD87335Q3DT | Виробник : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 25A; 1.5W; LSON-CLIP8 Technology: NexFET™ Case: LSON-CLIP8 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Dimensions: 3.3x3.3mm Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 5.7/10.7nC Type of transistor: N-MOSFET x2 Kind of channel: enhanced Gate-source voltage: ±10V Drain current: 25A Polarisation: unipolar Drain-source voltage: 30V |
товар відсутній |