CSICD10-1200 BK Central Semiconductor Corp
Виробник: Central Semiconductor CorpDescription: DIODE SIL CARBIDE 1.2KV 10A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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Технічний опис CSICD10-1200 BK Central Semiconductor Corp
Description: DIODE SIL CARBIDE 1.2KV 10A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 250 µA @ 1200 V.
Інші пропозиції CSICD10-1200 BK
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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CSICD10-1200 BK | Виробник : Central Semiconductor |
Schottky Diodes & Rectifiers 10A Schottky 1200V 1200Vrsm 80A 150W |
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