CTLDM304P-M832DS TR

CTLDM304P-M832DS TR Central Semiconductor Corp


CTLDM304P-M832DS.PDF Виробник: Central Semiconductor Corp
Description: MOSFET 2P-CH 30V 4.2A TLM832DS
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.65W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TLM832DS
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Технічний опис CTLDM304P-M832DS TR Central Semiconductor Corp

Description: MOSFET 2P-CH 30V 4.2A TLM832DS, Packaging: Tape & Reel (TR), Package / Case: 8-TDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.65W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.2A, Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, Rds On (Max) @ Id, Vgs: 70mOhm @ 4.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: TLM832DS.

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CTLDM304P-M832DS TR CTLDM304P-M832DS TR Виробник : Central Semiconductor ctldm304p-m832ds-217989.pdf MOSFET SMD Sm Signal Mosfet Dual P-Ch Enhanced
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