CUS15S40,H3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
| Кількість | Ціна |
|---|---|
| 3000+ | 3.96 грн |
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Технічний опис CUS15S40,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 170pF @ 0V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: USC, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A, Current - Reverse Leakage @ Vr: 200 µA @ 40 V.
Інші пропозиції CUS15S40,H3F за ціною від 5.39 грн до 23.73 грн
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CUS15S40,H3F | Виробник : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1.5A USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 7053 шт: термін постачання 21-31 дні (днів) |
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