CWDM3011N TR13 PBFREE Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 30V 11A 8SOIC
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
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Технічний опис CWDM3011N TR13 PBFREE Central Semiconductor Corp
Description: MOSFET N-CH 30V 11A 8SOIC, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): 20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA.
Інші пропозиції CWDM3011N TR13 PBFREE за ціною від 14.37 грн до 47.72 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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CWDM3011N TR13 PBFREE | Central Semiconductor Corp |
Description: MOSFET N-CH 30V 11A 8SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): 20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC |
на замовлення 2748 шт: термін постачання 21-31 дні (днів) |
|
| CWDM3011N TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 30V 11A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Description: MOSFET N-CH 30V 11A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
на замовлення 2748 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.72 грн |
| 10+ | 31.13 грн |
| 100+ | 21.27 грн |
| 500+ | 15.76 грн |
| 1000+ | 14.37 грн |