CXDM1002N TR PBFREE Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 100V 2A SOT-89
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис CXDM1002N TR PBFREE Central Semiconductor Corp
Description: MOSFET N-CH 100V 2A SOT-89, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): 20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-89, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Інші пропозиції CXDM1002N TR PBFREE за ціною від 25.49 грн до 78.56 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CXDM1002N TR PBFREE | Central Semiconductor |
MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV |
на замовлення 433 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
CXDM1002N TR PBFREE | Central Semiconductor Corp |
Description: MOSFET N-CH 100V 2A SOT-89 Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): 20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-89 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 2586 шт: термін постачання 21-31 дні (днів) |
|
| CXDM1002N TR PBFREE |
|
Виробник: Central Semiconductor
MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
на замовлення 433 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 75.03 грн |
| 10+ | 61.03 грн |
| 100+ | 41.27 грн |
| 500+ | 34.98 грн |
| 1000+ | 28.49 грн |
| 2000+ | 26.81 грн |
| 5000+ | 25.49 грн |
| CXDM1002N TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 100V 2A SOT-89
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 2A SOT-89
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 2586 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 78.56 грн |
| 10+ | 62.18 грн |
| 100+ | 47.87 грн |
| 500+ | 35.32 грн |