CY62167GN30-45BVXIT Infineon Technologies
Виробник: Infineon TechnologiesSRAM Chip Async Single 2.5V/3V/3.3V 16M-bit 1M x 16 45ns 48-Pin VFBGA T/R
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Технічний опис CY62167GN30-45BVXIT Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-VFBGA, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.2V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-VFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 45ns, Memory Interface: Parallel, Access Time: 45 ns, Memory Organization: 1M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції CY62167GN30-45BVXIT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| CY62167GN30-45BVXIT | Виробник : INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx16bit Access time: 45ns Kind of package: reel; tape Kind of interface: parallel Memory: 16Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: VFBGA48 Supply voltage: 2.2...3.6V DC кількість в упаковці: 2000 шт |
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CY62167GN30-45BVXIT | Виробник : Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48VFBGA Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY62167GN30-45BVXIT | Виробник : Infineon Technologies |
SRAM ASYNC |
товару немає в наявності |
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| CY62167GN30-45BVXIT | Виробник : INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx16bit Access time: 45ns Kind of package: reel; tape Kind of interface: parallel Memory: 16Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: VFBGA48 Supply voltage: 2.2...3.6V DC |
товару немає в наявності |