D1721NH90TAOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2160A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Description: DIODE GEN PURP 2160A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
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Технічний опис D1721NH90TAOSA1 Infineon Technologies
Description: DIODE GEN PURP 2160A D10026K-1, Packaging: Tray, Package / Case: DO-200, Variant, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 2160A, Supplier Device Package: BG-D10026K-1, Operating Temperature - Junction: 0°C ~ 140°C, Current - Reverse Leakage @ Vr: 150 mA @ 9000 V.
Інші пропозиції D1721NH90TAOSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
D1721NH90TAOSA1 | Виробник : Infineon Technologies | Schottky Diodes & Rectifiers HIGH POWER THYR / DIO |
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