Технічний опис DB156G GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1.5A DB, Packaging: Bulk, Package / Case: 4-EDIP (0.321", 8.15mm), Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: DB, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 1.5 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Інші пропозиції DB156G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| DB156G | Виробник : GeneSiC Semiconductor |
 Description: BRIDGE RECT 1PHASE 800V 1.5A DBPackaging: Bulk Package / Case: 4-EDIP (0.321", 8.15mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
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DB156G | Виробник : GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1KV 1.5A800P/560 |
товару немає в наявності |