DBL103GH Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 1A 200V DBL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Відгуки про товар
Написати відгук
Технічний опис DBL103GH Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 1A 200V DBL, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 2 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Average Rectified (Io): 1 A, Voltage - Peak Reverse (Max): 200 V, Grade: Automotive, Supplier Device Package: DBL, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.
Інші пропозиції DBL103GH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DBL103GH | Виробник : Taiwan Semiconductor | Bridge Rectifiers 1A, 200V, Standard Bridge Rectifier |
товару немає в наявності |