DD1000S33HE3B60BOSA1 Infineon Technologies

Description: DIODE MODULE GP 3300V AGIHVB1303, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 1000A (DC), Supplier Device Package: AG-IHVB130-3, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A, Current - Reverse Leakage @ Vr: 1000 A @ 1800 V.