DD1200S33K2CNOSA1 Infineon Technologies

Description: DIODE MODULE GP 3300V 1200A, Packaging: Tray, Package / Case: Block, 4 Lead, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 1200A (DC), Supplier Device Package: Module, Operating Temperature - Junction: -40°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A, Current - Reverse Leakage @ Vr: 1700 A @ 1800 V.