DD171N16KHPSA1

DD171N16KHPSA1 Infineon Technologies


Infineon-DD171N-DS-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48 Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.6KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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Технічний опис DD171N16KHPSA1 Infineon Technologies

Description: DIODE MODULE GP 1.6KV 171A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 171A, Supplier Device Package: Module, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A, Current - Reverse Leakage @ Vr: 20 mA @ 1600 V.