Технічний опис DD600S65K3NOSA1 Infineon Technologies
Description: DIODE MODULE GP 6500V AIHV130-6, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Supplier Device Package: A-IHV130-6, Operating Temperature - Junction: -50°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 6500 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 600 A, Current - Reverse Leakage @ Vr: 900 A @ 3600 V.
Інші пропозиції DD600S65K3NOSA1
| Фото | Назва | Виробник | Інформація |
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DD600S65K3NOSA1 | Виробник : Infineon Technologies |
 Description: DIODE MODULE GP 6500V AIHV130-6Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Supplier Device Package: A-IHV130-6 Operating Temperature - Junction: -50°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 6500 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 600 A Current - Reverse Leakage @ Vr: 900 A @ 3600 V |
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