DDB6U145N16LHOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Technology: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Diode Configuration: 3 Independent
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Технічний опис DDB6U145N16LHOSA1 Infineon Technologies
Description: DIODE MODULE GP 1600V, Current - Reverse Leakage @ Vr: 5 mA @ 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A, Voltage - DC Reverse (Vr) (Max): 1600 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Module, Technology: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Diode Configuration: 3 Independent.