DDB6U215N16LHOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
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Технічний опис DDB6U215N16LHOSA1 Infineon Technologies
Description: DIODE MODULE GP 1600V, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 3 Independent, Supplier Device Package: Module, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 300 A, Current - Reverse Leakage @ Vr: 10 mA @ 1600 V.