DDB6U50N16W1RBPSA1 Infineon Technologies


Infineon_DDB6U50N16W1R_DataSheet_v00_10_DE.pdf
Виробник: Infineon Technologies
Diode Modules EASY
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Технічний опис DDB6U50N16W1RBPSA1 Infineon Technologies

Description: IGBT MODULE 1200V 50A AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Single Chopper, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: AG-EASY1B, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 6.2 µA, Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V.

Інші пропозиції DDB6U50N16W1RBPSA1

Фото Назва Виробник Інформація Доступність Ціна
DDB6U50N16W1RBPSA1 DDB6U50N16W1RBPSA1 Infineon Technologies Infineon-DDB6U50N16W1R-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c7f2a768a017facf4ed7040ac Description: IGBT MODULE 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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DDB6U50N16W1RBPSA1 INFINEON TECHNOLOGIES DDB6U50N16W1R.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.6kV
Case: AG-EASY1B
Topology: boost chopper; three-phase diode bridge
Semiconductor structure: diode/transistor
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DDB6U50N16W1RBPSA1 Infineon-DDB6U50N16W1R-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c7f2a768a017facf4ed7040ac
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
DDB6U50N16W1RBPSA1 DDB6U50N16W1R.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.6kV
Case: AG-EASY1B
Topology: boost chopper; three-phase diode bridge
Semiconductor structure: diode/transistor
товару немає в наявності
В кошику  од. на суму  грн.