DDB6U75N16W1RBOMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 4551.16 грн |
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Технічний опис DDB6U75N16W1RBOMA1 Infineon Technologies
Description: IGBT MOD 1200V 69A 335W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 69 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 335 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V.
Інші пропозиції DDB6U75N16W1RBOMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
DDB6U75N16W1RBOMA1 | Виробник : Infineon Technologies | High Performance Bridge Rectifier |
товар відсутній |
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DDB6U75N16W1RBOMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 335W Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 335W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; NTC thermistor; three-phase diode bridge Case: AG-EASY1B Max. off-state voltage: 1.6kV кількість в упаковці: 1 шт |
товар відсутній |
||
DDB6U75N16W1RBOMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 335W Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 335W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; NTC thermistor; three-phase diode bridge Case: AG-EASY1B Max. off-state voltage: 1.6kV |
товар відсутній |